D-shape Sputtering Deposition Chamber with front open door for easy inside service
PID downstream and upstream pressure control
Good Film Uniformity and repeatability
Safety interlock for critical components
Configuration
Magnetron Sputter Chamber | C shape, 304 stainless steel chamber with viewport |
Vacuum Pumping | turbo-pump (or Cryopump) and dry pump |
Vacuum Valve | High vacuum gate valves Chamber Vent Valve, Rough and Foreline angle valve, and gas valve |
Vacuum Gauging | Wide range vacuum gauge and Pirani rough gauge |
Sputtering Sources
| Up to four 4” circle magnetron sputtering sources The power supply can be DC, pulse DC or RF power supply |
Sample Stage | Substrate rotating and heating or cooling |
Pressure Control | Multiple channel Mass flow controller Capacitance manometer for sputter process pressure PID control |
Cooled Water Interlock | Cooling water flow sensors of interlock to protect sputter sources work properly |
Specification
The Base Vacuum Pressure in Sputter Chamber | Better than 3E-8 Torr |
Sample Loading Capacity | Max. 6 inch flat substrate |
The Max. Temperature of the Sample Heater | 600C (option 1000C) |
The film uniformity | better than +/-5% over a rotating 6 inch Silicon wafer |
General Sputtering Pressure | 1-50mTorr |
